The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

This letter reports on the improvement of a SiO2 layer formed by atomic deposition 4H-SiC, using post-deposition anneal in forming gas ambient. Capacitance–voltage measurements revealed good electrical properties, compared to thermal oxide which was grown N2O, with flatband voltage values averaging at -0.29 V and low positive mobile ion charge density order 1010 cm?2. XPS analysis FG annealed sample have most Si rich interface comparatively other PDAs, C:Si ratio 0.72, allowing more bonds be terminated. SIMS identified an increase hydrogen near FG-annealed peak concentration 2.12 × 1021 cm?3. It is concluded that performance due passivating trap states SiO2/4H-SiC interface.